2N5401 PNP Transistor High-Voltage

0.85 EGP

2N5401 is a PNP transistor designed for high-voltage, low-current applications such as audio amplification and general-purpose signal processing.

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2N5401 PNP Transistor High-Voltage

The 2N5401 transistor operates as a PNP bipolar junction transistor (BJT), suitable for high-voltage, low-current applications. Engineers use this device in general-purpose linear and switching circuits, especially where higher voltage ratings are required. It handles up to 150 V between collector and emitter and supports a continuous collector current of 600 mA.

When you drive the base voltage lower than the emitter (by around 0.7 V), the transistor conducts from emitter to collector. Once you remove the base current or raise the base voltage above the emitter, the transistor turns off. This behavior makes it suitable for high-voltage stages in audio amplifiers, analog signal processing, and voltage-level control.

The 2N5401 comes in a TO-92 package, making it ideal for compact PCB layouts and low to moderate power dissipation.


 Pin Configuration (TO-92 Package)

PinNameDescription
1EmitterCurrent flows out
2BaseControls conduction state
3CollectorCurrent flows in

Key Features

  • Handles up to 150 V collector-emitter voltage

  • Supports 600 mA continuous collector current

  • Offers DC current gain (hFE) between 30–300

  • Works well in analog and low-frequency applications

  • Comes in compact TO-92 plastic package

  • Provides good linear performance for small-signal designs


Applications

  1. Drive high-voltage loads in analog circuits.

  2. Build preamplifier stages for audio devices.

  3. Create voltage-level shifting circuits.

  4. Replace high-voltage PNP transistors in legacy designs.

  5. Use in sensor signal conditioning circuits.

  6. Build discrete linear amplifiers.

  7. Add current sinking paths in control systems.

  8. Implement switching control for moderate DC loads.

  9. Construct transistor biasing networks.

  10. Use in educational electronics for PNP demonstration circuits.


Specifications Table

ParameterValue
Transistor TypePNP
Max Collector Current600 mA
Max Collector-Emitter Voltage150 V
Max Collector-Base Voltage160 V
Max Emitter-Base Voltage5 V
DC Current Gain (hFE)30–300 (typ. ~100)
Max Power Dissipation625 mW           
Transition Frequency (fT)~100 MHz
Saturation Voltage (VCEsat)~0.5–1 V
Package TypeTO-92
Operating Temperature-55 to +150 °C

2N5401 Transistor: Pinout, Feature, Application [Video]

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